Aluminum Nitride Substrates: AlN

AIN ceramic substrates are fabricated by tape casting technology. Its thermal conductivity is 4-5 times higher than Al2O3. It is an ideal substrate for electronic thick and thin film applications.

*   다양한 스펙 가능      /       *   다양한 사이즈 가능 (원하는 크기로 cutting 가능)
*   다양한 두께 가능      /       *   소량대량공급 가능
Aluminum Nitride Ceramic Substrates Properties
Item No. AN5113 AN5116
Purity (wt%) 98% 99%
Density (g/cm3) >3.25 >3.26
Thermal Conductivity (W/m. K) 100 - 300 >170
Thermal Expansion (x 10-6/oC) <4.3 <4.2
Dielectric Strength (Kv/mm) >15 >15
Dielectric Constant (at 1MHZ) 8.7 8.7
Loss Tangent (x 104@ 1 MHz) 3 - 7 3 - 7
Volume Resistivity (ohm-cm) >1014 >1014
Flexural Strength (Kgf/mm?) >25 >30
Substrate Specifications Max. Size 140 x 100 mm, thickness 0.63 - 0.2 mm
Surface Roughness ( micron) as fired 0.3 as lapped 0.075 as polished 0.025