Aluminum Nitride Substrates: AlN

3'' Dia x 0.025'' Thick Aluminum Nitride Substrate for RTP Furnace's Sample Holder - EQ-AIN-Holder

3'' Dia x 0.025'' Thick Aluminum Nitride Substrate for RTP Furnace's Sample Holder - EQ-AIN-Holder

기본 정보
Product Name 3'' Dia x 0.025'' Thick Aluminum Nitride Substrate for RTP Furnace's Sample Holder - EQ-AIN-Holder
Sale Price Call for Price
Product Code RTP-ALN3D
Quantity 수량증가수량감소
상품 옵션
 
Such unpolished Aluminum Nitride can be placed in the center of holder for holding test
samples up to 3’’ diam. The excellent temperature uniformity can be achieved in this 3’’
diam. area due to the benefit from its high thermal conductivity.
 

Aluminum Nitride Ceramic Substrates Properties

Item No.

AIN-Holder

Purity (wt%)

99% (AN5116)

Density (g/cm3)

   >3.26

Thermal Conductivity (W/m. K)

  >170

Thermal Expansion (x10-6/oC)

 <4.2

Dielectric Strength (Kv/mm)

 >15

Dielectric Constant (at 1MHZ)

8.7

Loss Tangent (x104@1 MHz)

  3 - 7

Volume Resistivity (ohm-cm)

     >1014

Flexural Strength (Kgf/mm)

  >30

Substrate Specifications

3’’ diameter, 0.65mm thickness
surface: fine ground

 
 
 
 
Product Configuration

The unpolished AIN in the center of holder is able to hold test samples up to 3’’ diam.