SiC-4H film on SiC-4H

4H-SiC Epitaxial Film on 4H-SiC(0001) with 4 degree off P type, 2"dia. x0.33mm, carrier conc. (0.3-1.9) E16/cc, 2sp, film thickness: 11 um

4H-SiC Epitaxial Film on 4H-SiC(0001) with 4 degree off P type, 2"dia. x0.33mm, carrier conc. (0.3-1.9) E16/cc, 2sp, film thickness: 11 um

기본 정보
Product Name 4H-SiC Epitaxial Film on 4H-SiC(0001) with 4 degree off P type, 2"dia. x0.33mm, carrier conc. (0.3-1.9) E16/cc, 2sp, film thickness: 11 um
Sale Price Call for Price
Product Code Fm4HSCon4HSC50d03C2deg4US
Quantity 수량증가수량감소
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Specifications: 

Film:

  •      •  4H-SiC (0001)
  •      •  Film target thickness: 11 um  with  (thickness acceptation range) +/- 10%
  •      •  Film target doping layer: 1.4E17/cc  with  (doping acceptation range)       +0% /- 30%
  •      •  Conductive Type: P type with 
  •      •  Carrier concentration:  (0.3~ 1.9)E16 /cc   
  •      •  Surface finish: Both sides will be polished after deposition,  Both Front and Backside Epiwafer polishing with Ra or RMS < 5 Angstrom

Substrate:

  •      •  4H-SiC (0001) Prime grade
  •      •  Off axis: miscut  4.0 +/- 0.5 degree
  •      •  Prime Grade: with FWHM 20 arc second
  •      •  OF orientation: parallel {10-10} +/- 5 degree
  •      •  OF length: 15.9 +/- 1.7 mm
  •      •  IF orientation: 90 degree cw. from OF +/- 5 degree
  •      •  IF length:     8.0 +/- 1.7 mm
  •      •  Diameter:    50.8 +/- 0.38 mm
  •      •  Thickness:   330 +/- 25 um
  •      •  Resistivity:   N/A
  •      •  Edge exclusion: 1mm
  •      •  Two sides polished with Si-face CMP with average roughness: Ra < 0.2 RMS