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SiC-4H film on SiC-4H
4H-SiC Epitaxial Film on 4H-Si (0001)with 8 degree off , P type, 2"dia. x0.33mm, carrier conc. 1.4 E17/cc, 2sp, film thickness: 4.3 microns
Specifications：
Film:
- • 4H-SiC (0001)
- • Film target thickness: 4.3 microns with (thickness acceptation range) +/- 10%
- • Film target doping layer: 1.4E17/cc with (doping acceptation range) +0% /- 30%
- • Conductive Type： P type with
- • Carrier concentration: (3~ 10)E16 /cc
- • Surface finish： Both sides will be polished after deposition, Both Front and Backside Epiwafer polishing with Ra or RMS < 5 Angstrom
Substrate:
- • 4H-SiC (0001) Prime grade
- • Off axis: miscut 8.0 +/- 0.5 degree
- • Prime Grade: with FWHM 20 arc second
- • OF orientation: parallel {10-10} +/- 5 degree
- • OF length: 15.9 +/- 1.7 mm
- • IF orientation: 90 degree cw. from OF +/- 5 degree
- • IF length: 8.0 +/- 1.7 mm
- • Diameter: 50.8 +/- 0.38 mm
- • Thickness: 330 +/- 25 um
- • Resistivity: < 0.03 ohm-cm
- • Edge exclusion: 1mm
- • Two sides polished with Si-face CMP with average roughness: Ra < 0.2 RMS
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Working days : Monday to Saturday
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