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Thermal Oxide Wafer 2" Dia.
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 2" dia x 0.5 mm t, N type , undoped, R>1000 ohm-cm
Thermal oxide Layer Silicon Wafer Specifications - • Conductive type: N- type/ Un- doped
- • Resistivity: >1000 ohm-cm
- • Size: 50.8 diameter +/- 0.5 mm x 0.5 +/- 0.025 mm
- • Orientation: (100) +/- 1o
- • Polish: one side polished
- • Surface roughnessm, Ra: < 5A(RMS)
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