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Thermal Oxide Wafer 2" Dia.
Thermal Oxide Wafer, 30 nm SiO2 Layer on Si (100), 2" dia x 0.50 mm t, N type, As-doped, 1 side polished, R:<0.005 ohm.cm
Thermal oxide Layer Silicon Wafer Specifications: - • Conductive type: N type/ As- doped
- • Resistivity: <0.005 ohm-cm (If you would like to measure the
resistivity accurately,
please order our Portable 4 Probe Resistivity Testing Instrument.) - • Size: 50.8 diameter +/- 0.5 mm x 0.50 +/- 0.025 mm
- • Orientation: (100) +/- 1o
- • Polish: one side polished
- • Surface roughness, Ra: < 5A (RMS)
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