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SiC (6H)
SiC - 6H (0001), 5x5x0.3-0.33 mm, 1 SP - SC6HZ050503s1
Specifications of Substrate
- • Orientation: <0001> +/-0.5
- • Dimension: 5x5x0.3-0.33 +/-0.025 mm
- • Polished: One side epi polished
- • Surface Roughness: < 10 A by AFM
Typical Properties of Single Crystal SiC
- • Formula weight: 40.10
- • Unit Cell: Hexagonal
- • Lattice constant: a =3.08 A, c = 15.117 A
- • Stacking sequence: ABCACB (6H)
- • Growth Technique: MOCVD
- • Polishing: Silicon face polished
- • Band Gap: 3.03eV ( Indirect)
- • Conductivity type: N
- • TTV/Bow/Wrap: <25 um
- • Micropipe Density: <30 cm^-2
- • Resistivity: 0.02~0.2 ohm-cm
- • Dielectric Constant: e (11) = e (22) = 9.66, e (33) = 10.33
- • Thermal Conductivity @ 300K: 5 W / cm . K
- • Hardness: 9 Mohs
- • TTV/Bow/Warp: <25 um
- • Micropipe Density: <30 cm^-2
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