Specifications of Substrate
- Orientation: (0001)/<11-20>^45 degree
- Dimension: 2"Dx0.33mm +/-0.03 mm
- Polished: One side polished
- Surface Roughness: < 10 A by AFM
Typical Properties of Single Crystal SiC
- Formula weight: 40.10
- Unit Cell: Hexagonal
- Lattice constant: a =3.08 A c = 15.117 A
- Stacking sequence: ABCACB (6H)
- Growth Technique: MOCVD
- Polishing: Silicon face polished
- Band Gap: 3.03eV ( Indirect)
- Conductivity type: N
- TTV/Bow/Wrap: <25 um
- Micropipe Density: <30 cm^-2
- Resistivity: 0.020~0.200 ohm-cm
- Dielectric Constant: e (11) = e (22) = 9.66 e (33) = 10.33
- Thermal Conductivity @ 300K: 5 W / cm . K
- Hardness: 9 Mohs
- TTV/Bow/Warp: <25 um
- Micropipe Density: <30 cm^-2
