Specifications of Substrate
- • Orientation: <0001> +/-0.5
- • Dimension: 2"Dx0.26mm +/-0.03 mm
- • Polished: one side epi polished
- • Surface Roughness: < 10 A by AFM
Typical Properties of Single Crystal SiC
- • Formula weight: 40.10
- • Unit Cell: Hexagonal
- • Lattice constant: a =3.08 A c = 15.117 A
- • Stacking sequence: ABCACB (6H)
- • Growth Technique: MOCVD
- • Polishing : Silicon face epi-ready polished
- • Band Gap: 3.03eV ( Indirect)
- • Conductivity type:N
- • TTV/Bow/Warp: <25 um
- • Micropipe Density: <30 cm^-2
- • Resistivity:0.020~0.200 ohm-cm
- • Dielectric Constant: e (11) = e (22) = 9.66 e (33) = 10.33
- • Thermal Conductivity @ 300K: 5 W / cm . K
- • Hardness: 9 Mohs
- • Doping level of nitrogen atoms : 10^18-19 cm^-3
