Specifications of Substrate
Typical Properties of Single Crystal SiC
- • Formula weight: 40.10
- • Unit Cell: Hexagonal
- • Lattice constant: a =3.07 A c = 10.53 A
- • Stacking sequence: ABCB (4H)
- • Growth Technique: MOCVD
- • Orientation: (0001)
- • Polishing :Silicon face EPI- polished
- • Band Gap: 3.26eV ( Indirect)
- • Conductivity type: N
- • Resistivity: 0.01~0.1 ohm-cm
- • TTV/Bow/Warp: <=25 um
- • Micropipe Density: <=15 cm^-2
- • Dielectric Constant: e (11) = e (22) = 9.66 e (33) = 10.33
- • Thermal Conductivity @ 300K: 4W / cm . K
- • Hardness: 9 Mohs
- • Ra: <= 1nm
