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InSb Te-doped
InSb (100) 2" dia x 0.5 mm, Te doped, N type, 2 side polished
2" InSb wafer (N type, Te Doped )
• Size: 2" dia x 0.5 (+/- 0.025 ) mm thick • Orientation: <100> +/-0.5 o • Polishing: two sides polishd • Packing: Sealed in nitrogen in single wafer container at 100 class clean room
Properties
• Growth method LEC • Orientation (100) +/- 0.5 o • Orientation Flat Two reference flates at <100> • Doping Te • Conductivity type N type
• Carrier Concentration (@77 K) (2-6)E17/cc @77K
Mobility (cm^2/Vs) (@77K): 3.9E 4
EPD ( / cm^2) < 200
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Working days : Monday to Saturday
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