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InSb Te-doped
InSb (100) 5 x 5 x 0.3 mm, N type, Te doped, 1 side polished
10x10x0.45 mm InSb wafer (N type, Te doped)
• Size: 5x5x0.3 mm • Orientation <100> +/-0.5o with two reference flats • Polishing: one-side side polishd ( back side etched ) • Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room
Properties
• Growth method LEC • Orientation (100) +/- 0.5o • Doping Te doped • Conductivity type N type • Carrier Concentration (0.19- 0.5)E18 @77K • Mobility >(3.58-5.6)E4 cm2/Vs • EPD <1200 - 1500 / cm 2
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