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InP(100) s-dopedInP single crystal wafer
• Growing Method: VGF • Orientation: (100) • Size: 2" diameter x 0.5 mm • Doping: S- doped • Conducting type: S-C-N • Polish: one side polished • Resistivity: (1.8-2.0)x10^-3 ohm.cm • Mobility: 1850-1870 cmE2/V.S • EPD: <2000 /cmE2 • Carrier Concerntration: (1.7-1.9) x10^18 /cm^3 • Ra(Average Roughness) : < 0.4 nm • EPI ready surface and packing |
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 Working days : Monday to Saturday 
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