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InP(100) Zn-dopedInP single crystal wafer
• Growing Method: VGF • Orientation: (100) • Size: 2" diameter x 0.35 mm • Doping: Zn doped • Conducting type: S-C • Polish: one side polished • Resistivity: (3.13-3.49)E-2 ohm.cm • Mobility: 58-59 cmE2/V.S • EPD: <5000 /cmE2 • Carrier Concerntration: (3.12-3.41) E18 /cm^3 • Ra(Average Roughness) : < 0.4 nm • EPI ready surface and packing |
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