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InAs(111)
InAs (111)A, undoped, N-type, 10mm x10mm x 0.45mm 1sp
- Specification
- • Growth method LEC
- • Orientation (111)A ± 0.5 Deg
- • Orientation Flat SEMI
- • Doping Undoped
- • Conductivity type N type
- • Carrier Concentration <2E16 / cm-3
- • Mobility >23400 cm2/V.S
- • EPD <10000 / cm 2
- • Resistivity: 1.3x10^-2 ohm.cm
- • Standard thickness 450 ± 25 mm
- • Size: 10mmx10mm
- • Polish one-side polished
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Working days : Monday to Saturday
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