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InAs(111)
InAs (111)B, N type, undoped, 2" in dia x 0.45mm, 1sp
- Specification
- • Growth method LEC
- • Orientation (111)B ± 0.5 Deg
- • Orientation Flat SEMI
- • Doping Undoped
- • Conductivity type N type
- • Carrier Concentration <3E16 / cm3
- • Mobility >20000 cm2/V.S
- • EPD <10000 / cm 2
- • Resistivity: N/A
- • Standard thickness 450 ± 25 mm
- • Standard diameter 2"± 0.4mm
- • Polish one-side
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Working days : Monday to Saturday
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