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Ge P-type Ga-doped
VGF-Ge Wafer(100) . 100 mmdia x 0.175 mm, 1SP, P type ( Ga doped) R:0.279-0.324 Ohm.cm
Ge Wafer Specification
Growing Method: VGF Orientation: (100) +/-0.5 Deg. Wafer Size: 100(+/-0.4) mm dia x 175(+/-25) microns
Surface Polishing: One side polished Surface roughness: < 8 A Doping: Ga Doped Conductor type: P-type Carrier Concentration: (0.92-1.10) E16 /c.c Mobility: (1900-2090) cm^2/v.s EPD: <=500 /cm^2 Package: under 1000 class clean room
Typical Properties of Ge Crystal
- • Structure: Cubic, a = 5.6754 A
- • Density: 5.323 g/cm3 at room temperature
- • Melting Point: 937.4 oC
- • Thermal Conductivity: 640
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