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Ge N-type ,undoped
Ge Wafer (111) 4" dia x 0.5 mm, 2SP, N type ( un- doped),R>40 ohm.cm
Ge Wafer Specification
• Growing Method: CZ • Orientation: (111) +/-0.5 Deg. • Wafer Size: 4" dia x 500 microns ( +/- 10 microm) • Surface Polishing: Two sides epi polished • Surface roughness: <30 A ( by AFM) • Doping: Un- Doped • Conductor type: N-type • Package: under 1000 class clean room
Typical Properties of Ge Crystal
- • Structure: Cubic, a = 5.6754 A
- • Density: 5.323 g/cm3 at room temperature
- • Melting Point: 937.4 oC
- • Thermal Conductivity: 640
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