| |
Ge N-type ,undoped
Ge Wafer (111) 4" dia x 0.5 mm, 1SP, N type ( un- doped) R>50 ohm.cm
Ge Wafer Specification
• Growing Method: CZ • Orientation: (111) +/-0.5 Deg. • Wafer Size: 4" dia x 500 microns • Surface Polishing: One side epi polished • Surface roughness: < 30 A ( by AFM) • Doping: Un- Doped • Conductor type: N-type • Package: under 1000 class clean room
Typical Properties of Ge Crystal
- • Structure: Cubic, a = 5.6754 A
- • Density: 5.323 g/cm3 at room temperature
- • Melting Point: 937.4 oC
- • Thermal Conductivity: 640
|
|
|
Working days : Monday to Saturday
|
|
|
