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Ge N-type ,undoped

 
  2. 4" Diameter Wafer
  3. Ge N-type ,undoped
 
 
Ge Wafer (110) N-type Undoped, 4" dia x 0.5 mm, 1SP,R:>50 ohm.cm

Ge Wafer (110) N-type Undoped, 4" dia x 0.5 mm, 1SP,R:>50 ohm.cm

기본 정보
Product Name Ge Wafer (110) N-type Undoped, 4" dia x 0.5 mm, 1SP,R:>50 ohm.cm
Sale Price Call for Price
Product Code GEUe101D05C1R50US
Quantity 수량증가수량감소
상품 옵션
 

Ge Wafer Specification

  •      •  Growing Method:          CZ
  •      •  Orientation:                   (110) +/-0.5 Deg.
  •      •  Wafer Size:                   4" dia x  500 microns  
  •      •  Surface Polishing:        one side epi polished
  •      •  Surface roughness:      < 30 A ( by AFM)
  •      •  Doping:                         Undoped
  •      •  Conductor type:             N-type
  •      •  Resistivity:                     >50  Ohms/cm (If you would like to measure the resistivity accurately, 
                                                  please order our Portable 4 Probe Resistivity Testing Instrument.)
         •  Package:                       under 1000 class clean room     


Typical Properties of Ge Crystal

  •      •  Structure:                              Cubic, a = 5.6754 Å
  •      •  Density:                                 5.323 g/cm3 at room temperature
  •      •  Melting Point:                        937.4 oC
  •      •  Thermal Conductivity:           640
 
  

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