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Ge N-type ,undoped
Ge Wafer (100) .N-type Undoped, 4" dia x 0.5 mm, 1SP,R>50 ohm.cm
Ge Wafer Specification
• Growing Method: CZ • Orientation: (100) +/-0.5 Deg. • Wafer Size: 4" dia x 500 microns • Surface Polishing: one side epi polished • Surface roughness: RMS or Ra:~ 10 A(By AFM) • Doping: Undoped • Conductor type: N-type
Typical Properties of Ge Crystal
- • Structure: Cubic, a = 5.6754 Å
- • Density: 5.323 g/cm3 at room temperature
- • Melting Point: 937.4 oC
- • Thermal Conductivity: 640
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