GaN Template on silicon is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template on silicon is a cost effective way to replace GaN single crystal substrate.
Specifications:
• Nominal GaN thickness: 0.20μm ± 0.1 μm
• Front Surface finish (Ga-face): <1nm RMS, As-grown,
