GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate.
Specifications
Research Grade
• Sizes2” Round
• Dimensions 50mm +/-2mm
• Substrate Sapphire,Orientation c-axis (0001) +/- 1.0 o