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Undoped GaN Template on Sapphire

 
  2. Crystals Substrates: A-Z
  3. GaN
  4. GaN Template on Sapphire
 
 
GaN Template on Sapphire(0001) 5 x 5 mm x 0.5mm,1sp .GaN Film: 5um

GaN Template on Sapphire(0001) 5 x 5 mm x 0.5mm,1sp .GaN Film: 5um

기본 정보
Product Name GaN Template on Sapphire(0001) 5 x 5 mm x 0.5mm,1sp .GaN Film: 5um
Sale Price Call for Price
Product Code FmGaNonALC0505055S1FT5um
Quantity 수량증가수량감소
상품 옵션
 

GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN.  GaN template is a cost effective way to replace GaN single crystal substrate

Specifications

  •      •  Size : 5mmx5mm
         •  Substrate Sapphire,  Orientation C (0001) +/- 1.0 o
         •  Conduction Type: n-type,
         •  Resistivity < 0.5 Ohm-cm
         •  Front Surface Finish (Ga Face) As-grown
         •   Back Surface Finish Sapphire as-received finish
         •   Useable Surface Area >90% 
         •   Edge Exclusion Area 1mm
         •   Package Single Wafer Container
         •  GaN layer thickness   5 microns , (=/- 10%) with roughness: ~10 nm RMS as measured by the Wyko (white light interferometer) for 50 umx50 um area

 
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