• Sizes 5mmx5mm
• Substrate Sapphire, Orientation R (00.1) +/- 1.0 o
• Conduction Type: n-type,
• Resistivity < 0.5 Ohm-cm
• Front Surface Finish (Ga Face) As-grown
• Back Surface Finish Sapphire as-received finish
• Useable Surface Area >90%
• Edge Exclusion Area 1mm
• Package Single Wafer Container
• GaN layer thickness 5 microns , (=/- 10%)