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GaAs(111)
GaAs (111)B orientation, Semi-Insulating, undoped, 5X5x 0.625mm, 1sp
• Growing Method: VGF
• Orientation: (111)B • Primary Flat: EJ(0-11)+/- 0.5 deg; Secondary Flat: EJ(-211)
• Size: 5X5 x 0.625mm
• Polishing: One side polished
• Doping: undoped
• Conductor type: Semi-Insulating • Resistivity:(1.57-3.86)E8 ohm.cm
• Carrier Concentration: N/A
• Mobility: (4120-5860) cm^2/V.S
• EPD: N/A • Ra(Average Roughness) : < 0.4 nm
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Working days : Monday to Saturday
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