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GaAs(111)
GaAs ,Growing Method: VGF (111)B , Si-doped, 2" dia x 0.325mm, 1sp
- GaAs single crystal wafer
- • Growing Method: VGF
• Orientation: (111)B • Primary Flat: EJ(0-11)+/- 0.5 deg; Secondary Flat: EJ(-211)
• Size: 2" dia x 0.325mm
• Polishing: One side polished
• Doping: Si-doped
• Conductor type: S-C-N • Resistivity:(1.12-2.53)E-3 ohm.cm
• Carrier Concentration: (1.09-3.37)x10^18 /c.c
• Mobility: (1650-2330) cm^2/v.s
• EPD: N/A • Ra(Average Roughness) : < 0.4 nm - • Note: EPI ready wafers
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Working days : Monday to Saturday
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