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GaAs(111)
GaAs ,Growing Method: VGF (111)B , SI, undoped, 4" dia x 0.625 mm, 1 sp (부가세 별도)
- GaAs single crystal wafer
- • Growing Method: VGF
- • Orientation: (111)B
- • Primary Flat: EJ(0-11)+/- 0.5 deg; Secondary Flat: EJ(-211)
- • Size: 4" dia x 0.625mm
- • Polishing: One side polished
- • Doping: undoped
- • Conductor type: Semi-Insulating
- • Resistivity:(1.57-3.86)E8 ohm.cm
- • Carrier Concentration: N/A
- • Mobility: (4120-5860) cm^2/V.S
- • EPD: N/A
- • Ra(Average Roughness) : < 0.4 nm
- • Note: EPI ready wafers
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Working days : Monday to Saturday
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