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GaAs(111)
GaAs ,Growing Method: VGF (111)A , SI, undoped, 4" dia x 0.55 mm, 1 sp (부가세별도)
- GaAs single crystal wafer
- • Growing Method: VGF
- • Orientation: (111)A
- • Primary Flat: US(0-11); Secondary Flat: US(2-1-1)
- • Size: 4" dia x 0.55 mm
- • Polishing: One side polished
- • Doping: undoped
- • Conductor type: Semi-Insulating
- • Resistivity:(1.55-3.86)E8 ohm.cm
- • Carrier Concentration: N/A
- • Mobility:4120-5860 cm^2/V.S
- • EPD: N/A
- • Ra(Average Roughness) : < 0.4 nm
- • Note: EPI ready wafers
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Working days : Monday to Saturday
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