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Thermal Oxide Wafer 2" Dia.
Thermal Oxide Wafer: 50 nm SiO2 Layer on Si (100), 2" dia x 0.30 mm t, N type , undoped
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Research Grade , about 80 % useful area
- SiO2 layer on 2" Silicon wafer
- Oxide layer thickness
- 50 nm ( 500 A ) +/-10%
- Note
- customized oxide layer available upon request from 50 nm - 1000 nm
- Silicon Wafer Specifications
- Conductive type
- N- type / Un- doped
- Resistivity
- > 1000 ohm-cm
- Size
- 50.8 diameter +/- 0.5 mm x 0.3 +/- 0.025 mm
- Surface roughnessm, Ra
- < 5A (RMS)
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