• Growing Method: VGF • Orientation: (100)
• Size: 10x10x0.625mm
• Polishing: one side polished
• Doping: Zn doped
• Conductor type: P-type
• Carrier Concentration: (1.3-2.2) x 10^19 /cm^3
• Mobility: 64-75 cm^2/V.S
• EPD: <5000/cm^2
• resistivity: (4.5-6.7)x10^-3 ohm.cm • Ra(Average Roughness) : < 0.4 nm