Fearures:

•      •  R plane -- (1-102) orientation sapphire wafer is being used  as a superconductor substrate due to less
          mis-matched lattice and stable chemical and physical properties. 
•      •  Wafer size:   3" dia x  0.5 mm thickness 
•      •  (1-102) R-plane orientation +/-0.5 Deg, orientation with 45 degree counter-clockwise from the
          projection of C-axis onto the R-plane
  
•      •  Polished surface:   Wafer surface is EPI polished via a special CMP procedure. 
•      •  One side polished
•      •  Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container.
•      •  Precaution: R plane sapphire wafer is easy to cleave compared with C plane's. Please handle it with a care
  
  

Typical Properties:

•      •   Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms,
•      •  Melting Point: 2040 degree C
•      •  Density: 3.97 gram/cm² 
•      •  Growth Technique: CZ
•      •  crystal purity: >99.99%
•      •  Hardness: 9 ( mohs)
•      •  Thermal Expansion: 7.5x10^{-6 (}/ ^oC)
•      •  Thermal Conductivity: 46.06 @ 0 ^oC     25.12 @ 100 ^oC,     12.56 @ 400 ^oC   ( W/(m.K) )
•      •  Dielectric Constant: ~ 9.4 @300K  at A axis ~ 11.58@ 300K at C axis
•      •  Loss Tangent at 10 GHz: < 2x10^-5  at A axis ,  <5 x10^-5  at C axis
  
  

 Please click here for detail data