Fearures:

•      •  Monocrystalline Sapphire Wafer
•      •  Purity> =99.995%
•      •  Wafer size: 100 mm dia x 0.46 mm+/-25um thickness 
•      •  Orientation: R-plane (1102) +/- 0.2 deg
•      •  Orientaion Flat: 31 +/- 2.5 mm
•      •  Primary Flat Location: Projected C-Axis 45 +/- 2 degree
•      •  Surface Roughness: Ra <= 3 Angstrom
•      •  One side polished
•      •  Edge Chamfering: Ground with 45 degree chamfering 
•      •  Back surface: 1 +/- 0.2 um (by lapping process)
•      •  Bow: <= 20um
•      •  Laser Mark: none
•      •  Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
•      •  Precaution: R plane sapphire wafer is easy to cleave compared with C plane's. Please handle it with a care 
  
  

•      •  Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
•      •  Melting Point: 2040 degree C
•      •  Density: 3.97 gram/cm² 
•      •  Growth Technique: CZ
•      •  Crystal Purity:  >99.99%
•      •  Hardness: 9 ( mohs)
•      •  Thermal Expansion: 7.5x10^{-6 (}/ ^oC)
•      •  Thermal Conductivity: 46.06 @ 0 ^oC, 25.12 @ 100 ^oC, 12.56 @ 400 ^oC ( W/(m.K) ) 
•      •  Dielectric Constant: ~ 9.4 @300K  at A axis ~ 11.58@ 300K at C axis
•      •  Loss Tangent at 10 GHz: < 2x10^-5  at A axis,  <5 x10^-5  at C axis
  
  

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