SOI Wafer ( Silicon On Insulator )

SOI Wafer: 6", 2.5 µm (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron doped )

SOI Wafer: 6", 2.5 µm (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron doped )

기본 정보
Product Name SOI Wafer: 6", 2.5 µm (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron doped )
Sale Price Call for Price
Product Code SI-SOI-2.5-1-625-6
Quantity 수량증가수량감소
상품 옵션
 
  •  Device Layer
  • Diameter
  • 6"
  • Type/Dopant
  • P-doped
  • Orientation
  • <1-0-0> +/-.5 degree
  • Thickness
  • 2.5 ±0.5 µm
  • Resistivity
  • 1-4 ohm-cm
  • Flatness
  •  
  • Flats
  • Semi
  • Finish
  • Polished
  •  Buried Thermal Oxide
  • Thickness
  • 1.0 um +/- 0.1 um
  •  Handle Wafers
  • Type/Dopant
  • P Type,     B doped
  • Orientation
  • <1-0-0> +/-.5 degree
  • Resistivity
  • 10-20 ohm-cm
  • Thickness
  • 625 +/- 15 um
  • Finish
  • As-received (not polished)