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Ga2O3-ß Film on Sapphire
Ga2O3-ß Single Crystal Substrate, <201> ori, 2"dia x0.6mm, 1SP
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ß-Ga2O3 single crystal substrate has wider band-gap than SiC and GaN, and is excellent substrate for new generation of LED
- Lattice Constant
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a = 12.23 A, b = 3.04 A, c = 5.80 A, ß = 103.7°
- Orientation
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<201> +/-0.7°
( Please pay attention a, b, c axis defination above )
- Size
- 50 mm Dia. x 0.65 mm
- ß-Ga2O3 single crystal Properties and Application
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Working days : Monday to Saturday
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