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SiC-4H film on SiC-4H
4H-SiC Epitaxial Film on 4H-SiC, P type, 10x10x0.33mm, carrier conc. 1.4E17/cc, 2sp
- Film target thickness
- 4.3 microns with (thickness acceptation range) +/- 10 %
- Film target doping layer
- p 1E17/cc with (doping acceptation range) + 0 % /- 30 %
- Conductive Type
- P type with
- Carrier concentration
- 1.4E17 /cc
- Surface finish
- Both sides will be polished after deposition, Both Front and Backside Epiwafer polishing with Ra or RMS < 5 Angstrom
- 4H-SiC (0001) Prime grade
- Off axis
- miscut 8.0 +/- 0.5 degree
- Prime Grade
- with FWHM 20 arc second
- OF orientation
- parallel {10-10} +/- 5 degree
- OF length
- 15.9 +/- 1.7 mm
- IF orientation
- 90 degree cw. from OF +/- 5 degree
- Resistivity
- < 0.03 ohm-cm
- Single side polished
with Si-face CMP
with average roughness
- Ra < 0.2 RMS
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Working days : Monday to Saturday
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