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InAlAs on InP

 
  2. Thin Film on Substrates: A-Z
  3. InAlAs on InP
 
 
2" dia. InAlAs EPI Film on InP (SI) (100) 2" dia x0.35mm,1sp , EPI layer :300nm thick, undoped In0.52Al0.48As

2" dia. InAlAs EPI Film on InP (SI) (100) 2" dia x0.35mm,1sp , EPI layer :300nm thick, undoped In0.52Al0.48As

기본 정보
Product Name 2" dia. InAlAs EPI Film on InP (SI) (100) 2" dia x0.35mm,1sp , EPI layer :300nm thick, undoped In0.52Al0.48As
Sale Price Call for Price
Product Code InAlAs on InP(SEMI) 50D035C1-US
Quantity 수량증가수량감소
상품 옵션
 
  • 2" dia. wafer InAlAs EPI on InP (Semi-insulating)(100) by MOCVD deposition
  •  Substrate
  • InP Orientation
  • (100)
  • Doped with Fe, Semi-Insulating
  • wafer Size
  • 2" diameter
  • Resistivity
  • > 1 x 107 ohm.cm
  • EPD
  • < 1 x 104 /cm2
  •  EPI Film
  • •Undoped In0.52Al0.48As, Thickness : 300 nm
    •One side polished
    •Roughness N/A
  •  Related Products
 
  

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