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InGaP on GaAs
InGaP/GaAs EPI Ready wafer ,P/E 3" dia.x0.625mm ,1sp
- •InGaP: Si/GaAs;
•Si EPI Ready wafer ,P/E 3" dia. x 0.625mm ,1sp
- Substrate
- •Gallium Arsenide wafers,
•P/E 3"Ø × 625 ±25µm,
- n-type GaAs
- Si [100] ±0.5°,
- •One-side-polished,
•back-side matte etched,
•US Flat (one).
- Epi
- •1µm n-type InGaP: Si[100]±0.5°,
•lattice-match.
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Working days : Monday to Saturday
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