|
InAs(111)
InAs (111)A, P Type, Zn doped 2" dia x 0.45 mm, one side polished
- •2" InAs wafer
•P Type, Zn doped
- Size
- 2" dia x 450 micron +/-20 microns
- Polishing
- one-side polishd
- Resistivities
- 5.1 x 10-2 ohm-cm
- Packing
- in 1000 class clean room with wafer container
- Carrier Concentration
- 6.4E17/ cm3
- Resistivity
- 5.1 x 10-2 Ohm-Cm
|
|
|
Working days : Monday to Saturday
|
|
|