InAs(111)

InAs (111)A, P Type, Zn doped  2" dia x 0.45 mm, one side polished

InAs (111)A, P Type, Zn doped 2" dia x 0.45 mm, one side polished

기본 정보
Product Name InAs (111)A, P Type, Zn doped 2" dia x 0.45 mm, one side polished
Sale Price Call for Price
Product Code IAZnc50D045C1
Quantity 수량증가수량감소
상품 옵션
 
  •  2" InAs wafer (P type)
  • 2" InAs wafer
    P Type, Zn doped
  • Size
  • 2" dia x 450 micron +/-20 microns
  • Orientation
  • <111>A
  • Polishing
  • one-side polishd
  • Resistivities
  • 5.1 x 10-2 ohm-cm
  • Packing
  • in 1000 class clean room with wafer container
  •  Properties
  • Growth method
  • LEC
  • Orientation
  • (111) A
  • Orientation Flat
  • SEMI
  • Doping
  • Zn doped
  • Conductivity type
  • P type
  • Carrier Concentration
  • 6.4E17/ cm3
  • Mobility
  • 192 cm2/V.S
  • Resistivity
  • 5.1 x 10-2 Ohm-Cm
  • EPD
  • 1.9E4 / cm 2