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InAs <100> doped
InAs (100), P Type, Zn doped 2" dia x 0.5 mm, one side polished
- •2" InAs wafer
•P Type, Zn doped
- Size
- 2" dia x 0. 5 mm +/-20 microns
- Orientation
- <100> +/-0.5 o
- Polishing
- one-side polishd
- Carrier concentration
- 1 x 1017 ohm-cm
- Packing
- in 1000 class clean room with wafer container
- Orientation
- (100) +/- 0.5 o
- Carrier Concentration
- 5.3E18/ cm3
- Resistivity
- 0.0084 Ohm-Cm
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Working days : Monday to Saturday
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