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GaAs(111)

 
  2. Crystals Substrates: A-Z
  3. GaAs
  4. GaAs(111)
 
 
GaAs ,Growing Method: VGF (111)B , Si-doped, 2" dia x 0.35mm, 2sp

GaAs ,Growing Method: VGF (111)B , Si-doped, 2" dia x 0.35mm, 2sp

기본 정보
Product Name GaAs ,Growing Method: VGF (111)B , Si-doped, 2" dia x 0.35mm, 2sp
Sale Price Call for Price
Product Code GASic50D035C2-VGF-B-US
Quantity 수량증가수량감소
상품 옵션
 
  •  GaAs single crystal wafer
  • Growing Method
  • VGF
  • Orientation
  • (111)B
  • Primary Flat
  • EJ(0-11) +/- 0.5 deg
  • Secondary Flat
  • EJ(-211)
  • Size
  • 2" dia x 0.35 mm
  • Polishing
  • Two sides polished
  • Doping
  • Si-doped
  • Conductor type
  • S-C-N
  • Resistivity
  • (1.5 - 4.1) E-3 ohm.cm
  • Carrier Concentration
  • (0.6 - 2.4) x 1018 /c.c
  • Mobility
  • 1750 - 2450 cm2/V.S
  • EPD
  • N/A
  • Ra(Average Roughness)
  • < 0.4 nm
  • Note
  • EPI ready wafers
 
  

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