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Round Al2O3 (11-02) wafer
Al2O3- Sapphire Wafer, R Plane, 100mm dia x 0.525mm 2SP
- Monocrystalline Sapphire Wafer
- Wafer size
- 100 mm dia x 0.525 mm +/- 25 um thickness
- Orientation
- R-plane (1102) +/- 0.2 deg
- Orientaion Flat
- 31 +/- 2.5 mm
- Primary Flat Location
- Projected C-Axis 45 +/- 2 degree
- Surface Roughness
- Ra <= 3 Angstrom
- Edge Chamfering
- Ground with 45 degree chamfering
- Back surface
- 1 +/- 0.2 um (by lapping process)
- Package
- Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container.
- Precaution
- R plane sapphire wafer is easy to cleave compared with C plane's. Please handle it with a care
- Crystal Structure
- Hexagonal. a=4.758 Angstroms c=12.99 Angstroms,
- Melting Point
- 2040 degree C
- Thermal Expansion
- 7.5 x 10-6 (/ oC)
- Thermal Conductivity
- 46.06 @ 0 oC
25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
- Dielectric Constant
- ~ 9.4 @ 300K at A axis ~ 11.58 @ 300K at C axis
- Loss Tangent at 10 GHz
- < 2 x 10-5 at A axis ,
< 5 x 10-5 at C axis
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