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SiO2+Si3N4 on Si wafer
300 nm SiO2+50nm Si3N4 Films on Si (100), 2" dia x 0.250 mm t, P type , B-doped R:<0.01-0.1ohm.cm
- •Research Grade , about 80 % useful area
•SiO2(300nm) + 50nm Si3N4 layer on 2" Silicon wafer( Both sides)
•Oxide layer thickness: 300 nm ( 3000A) +/-10%
•Si3N4 thickness:50nm( Both sides)
•Growth method - Dry oxidizing at 1000oC
•Refractive index - 1.455
•Note: customized oxide layer available upon request from 50 nm - 1000 nm
- Silicon Wafer Specifications
- Conductive type
- Si P type/ Boron doped
- Resistivity
- 0.01-0.1 ohm-cm
- Size
- 50.8 diameter +/- 0.5 mm x 0.250 +/- 0.025 mm
- Orientation
- (100) +/- 0.5o
- Polish
- Both sides polished
- Optional
- you may need tool below to handle the wafer (click picture to order)
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Working days : Monday to Saturday
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