SOI Wafer ( Silicon On Insulator )

SOI Wafer: 10x10x0.625mm, 2 .5µm (P-doped) +1.0 SiO2 +625um Si (P-type /Boron doped)

SOI Wafer: 10x10x0.625mm, 2 .5µm (P-doped) +1.0 SiO2 +625um Si (P-type /Boron doped)

기본 정보
Product Name SOI Wafer: 10x10x0.625mm, 2 .5µm (P-doped) +1.0 SiO2 +625um Si (P-type /Boron doped)
Sale Price Call for Price
Product Code SOI-2.5-1-625-1010
Quantity 수량증가수량감소
상품 옵션
 
  •  Device Layer
  • Size
  • 10 x 10
  • Type/Dopant
  • P-doped
  • Orientation
  • <1-0-0> +/-.5 degree
  • Thickness
  • 2.5 ±0.5 µm
  • Resistivity
  • 1-4 ohm-cm
  • Flatness
  •  
  • Flats
  • Semi
  • Finish
  • Polished
  •  Buried Thermal Oxide
  • Thickness
  • 2.5 um +/- 5 %
  •  Handle Wafers
  • Type/Dopant
  • B-doped
  • Orientation
  • <1-0-0> +/-.5 degree
  • Resistivity
  •  
  • Thickness
  • 500 +/- 10 um
  • Finish
  • Polished