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SiC (6H)
SiC - 6H (0001), with 3.5 degree off , 5x5x0.26 mm, one side polished
- Specifications of Substrate
- Orientation
- <0001> +/-0.5 with 3.5 degree off
- Dimension
- 5 x 5 x 0.26 +/-0.03 mm
- Polished
- One side epi polished and Si face terminated
- Surface Roghness
- < 10 A by AFM
- Typical Properties of Single Crystal SiC
- Lattice constant
- •a = 3.08 Å
•c = 15.117 Å
- Stacking sequence
- ABCACB (6H)
- Orientation
- on axis or 3.5o off (0001)
- Polishing
- Silicon face polished
- Band Gap
- 3.03 eV ( Indirect)
- Resistivity
- 0.02~0.2 ohm-cm
- Dielectric Constant
- •e (11) = e (22) = 9.66
•e (33) = 10.33
- Thermal Conductivity @ 300K
- 4 W / cm . K
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