| |
InSb Te-doped
InSb (111)- B 2" dia x 0.45 mm, Te-doped, N type, 1 side(Sb) polished
- 2" InSb wafer (N type, Te-doped)
- Size
- 2" dia x 0.45 mm thick
- Orientation
- <111> +/-0.5 o with two reference flats
- Polishing
- one-side side(Sb) polishd ( back side etched )
- Packing
- Sealed under nitrogen with single wafer comtainer in 1000 class clean room
- Orientation
- (111) +/- 0.5 o
- Orientation Flat
- <110> .<112>
- Resistivity
- (1.1 - 3.3) x 10E-4 ohm.cm
- Carrier Concentration
- 5 x 10E17-2 x 10E18 cmE-2
- Mobility
- 24000 - 34000 cm2/Vs
|
|
|
Working days : Monday to Saturday
|
|
|
