| |
InSb Te-doped
InSb (100) 2" dia x 0.45 mm, Te doped, N type, 1 side polished
- 2" InSb wafer (N type, Te Doped )
- Size
- 2" dia x 0.45 mm thick
- Orientation
- <100> +/-0.2 o
- Polishing
- one side polishd
- Packing
- Sealed in nitrogen in single wafer container at 1000 class clean room
- Orientation
- (100) +/- 0.2 o
- Orientation Flat
- Two reference flates at <100>
- Carrier Concentration
- (0.1 - 0.3)E18/cc
|
|
|
Working days : Monday to Saturday
|
|
|
