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InSb Te-doped

 
  2. Crystals Substrates: A-Z
  3. InSb
  4. InSb Te-doped
 
 
InSb (100) 10x10x 0.45 mm, N type, Te doped, 1 side polished

InSb (100) 10x10x 0.45 mm, N type, Te doped, 1 side polished

기본 정보
Product Name InSb (100) 10x10x 0.45 mm, N type, Te doped, 1 side polished
Sale Price Call for Price
Product Code ISTea101004S1
Quantity 수량증가수량감소
상품 옵션
 
  •  10x10x0.45 mm InSb wafer (N type, Te doped)
  • Size
  • 10 x 10 x 0.45 mm
  • Orientation
  • <100> +/-0.2 o with two reference flats
  • Polishing
  • one-side side polishd ( back side etched )
  • Packing
  • Sealed under nitrogen with single wafer comtainer in 1000 class clean room
  •  Properties
  • Growth method
  • LEC
  • Orientation
  • (100) +/- 0.2 o
  • Orientation Flat
  • Two <010> and <001>
  • Doping
  • Te doped
  • Conductivity type
  • N type
  • Carrier Concentration
  • (0.19 - 0.5)E18 @77K
  • Mobility
  • > (3.58 - 5.6)E4 cm2/Vs
  • EPD
  • < 1200 - 1500 / cm 2
 
  

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