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InSb Ge-doped
InSb (100) 2" dia x 0.45 mm, P type, Ge doped , 1 sided polished , carrier conc: (0.05-0.50)x10^17/cc
- 2" InSb wafer (P type, Ge doped )
- Size
- 2" dia x 0.45 mm thick
- Orientation
- <100> +/-0.2 o
- Polishing
- one side polishd
- Packing
- Sealed in nitrogen in single wafer container at 1000 class clean room
- Orientation
- (100) +/- 0.5 o
- Carrier Concentration
- (0.05 - 0.50) x 1017/cc
- Mobility
- > (4.0 - 8.4) x 103 cm2/Vs
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Working days : Monday to Saturday
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