Ge P-type Ga-doped

Ge Wafer(100) . 100mm dia x 0.5 mm, 2SP, P type ( Ga doped) R: 0.004-0.01ohm.cm -- New Productl!!

Ge Wafer(100) . 100mm dia x 0.5 mm, 2SP, P type ( Ga doped) R: 0.004-0.01ohm.cm -- New Productl!!

기본 정보
Product Name Ge Wafer(100) . 100mm dia x 0.5 mm, 2SP, P type ( Ga doped) R: 0.004-0.01ohm.cm -- New Productl!!
Sale Price Call for Price
Product Code GEGaa100D05C2-2-Be
Quantity 수량증가수량감소
상품 옵션
 
  •  Ge Wafer Specification
  • Growing Method
  • CZ
  • Orientation
  • (100) +/-0.2 Deg.
  • Primary Flat
  • <110> +/-0.2 Deg.
  • Wafer Size
  • 100mm(+/-0.05mm) dia x 500 (+/-25 microns )
  • Surface Polishing
  • Two sides epi polished
  • Surface roughness
  • < 5 A ( by AFM)
  • Doping
  • Ga Doped
  • Conductor type
  • P-type
  • Resistivity
  • R: 0.004-0.01 ohm.cm
  • EPD
  • 0
  • Package
  • under 1000 class clean room
  •  Typical Properties
  • Structure
  • Cubic, a = 5.6754 Å
  • Density
  • 5.323 g/cm3 at room temperature
  • Melting Point
  • 937.4 oC
  • Thermal Conductivity
  • 640